1
Department of Computer, Bam branch, Islamic Azad University, Bam, Iran
2
Department of Computer Engineering, Rafsanjan Branch, Islamic Azad University, Rafsanjan, Iran
Abstract
In this paper, a full adder cell based on majority function using Carbon-Nanotube Field-Effect Transistor (CNFET) technology is presented. CNFETs possess considerable features that lead to their wide usage in digital circuits design. For the design of the cell input capacitors and inverters are used. These kinds of design method cause a high degree of regularity and simplicity. The proposed design can be used in many applications specifically wherever the low power consumption is the goal. The proposed full adder cell is compared to five full adders in terms of power consumption, speed, and power delay product (PDP). Also in order to evaluate the proposed design, several simulations are performed in different load capacitors, frequencies and temperatures. Simulation results demonstrate the higher efficiency of the proposed full adder cell with respect to other conventional and modern CNFET and MOSFET implementations. All Simulations are performed by using Synopsys HSPICE with 32 nm CMOS and 32 nm CNFET technologies.
Mohammadi Ghanatghestani, M., Bagherizadeh, M. (2019). A Low Power Full Adder Cell based on Carbon Nanotube FET for Arithmetic Units. Journal of Advances in Computer Research, 10(3), 1-12.
MLA
Mokhtar Mohammadi Ghanatghestani; Mehdi Bagherizadeh. "A Low Power Full Adder Cell based on Carbon Nanotube FET for Arithmetic Units". Journal of Advances in Computer Research, 10, 3, 2019, 1-12.
HARVARD
Mohammadi Ghanatghestani, M., Bagherizadeh, M. (2019). 'A Low Power Full Adder Cell based on Carbon Nanotube FET for Arithmetic Units', Journal of Advances in Computer Research, 10(3), pp. 1-12.
VANCOUVER
Mohammadi Ghanatghestani, M., Bagherizadeh, M. A Low Power Full Adder Cell based on Carbon Nanotube FET for Arithmetic Units. Journal of Advances in Computer Research, 2019; 10(3): 1-12.
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