High-Speed Penternary Inverter Gate Using GNRFET

Document Type : Original Manuscript


1 Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, Iran

2 Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran


This paper introduces a new design of penternary inverter gate based on graphene nanoribbon field effect transistor (GNRFET). The penternary logic is one of Multiple-valued logic (MVL) circuits which are the best substitute for binary logic because of its low power-delay product (PDP) resulting from reduced complexity of interconnects and chip area. GNRFET is preferred over Si-MOSFET for circuit design due to its fantastic thermal, mechanical and electrical properties. For this circuit design, the voltage divisions obtained with resistors. All the circuits are simulated and compared by HSPICE, 15nm GNR Technology with the supply voltage of 0.8V. Simulation results demonstrate that the PDP is about 1e-18. Therefore, MVL design based on GNRFET leads to minimum PDP than other devices such as CNTFET. Furthermore, the transient wave is absolutely accurate. The variation of the figure of merits (FOM) such as power consumption, propagation delay, and PDP is investigated as a function of a number of the ribbon in GNRFET structure.


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